2017. 02. 21 1/9 semiconductor technical data KUS035N06F n-ch trench mos fet revision no : 0 v dss 60 v r ds(on) (max)@v gs =10v 3.8 m ? i d 92 a main parameter general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for dc/dc converter, synchronous rectification and a load switch in battery powered applications features h split gate trench technology h ultra low on-resistance h ultra low gate charge (typ. qg=88nc) h periodic avalanche rated h fully isolated package (2500 v ac : 1 minute) h pb-free lead plating; rohs compliant h qualified according to jedec h ideal for high-frequency switching and synchronous rectification * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 92 a @t c =100 ? 58 pulsed (note 1) i dp 368* single pulsed avalanche energy (note 2) e as 148 mj repetitive avalanche energy (note 1) e ar 4.1 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 55 w derate above 25 ? 0.44 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 ~ 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 2.27 ? /w thermal resistance, junction-to-ambient r thja 62.5 ? /w maximum rating (tc=25 ? ) g d s g d s pin connection to-220is(1)
2017. 02. 21 2/9 KUS035N06F revision no : 0 electrical characteristics (tc=25 ? ) 3 product name lot no 2 kec logo 1 3 2 1 kec kus 035n06 f 001 marking note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 19 h, i s =80a, v dd =48v, r g =25 ? , starting t j =25 ? . note 3) i s ? 80a, v dd ? bv dss , starting t j =25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 60 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.04 - v/ ? drain cut-off current i dss v ds =100v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 20v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =45a - 3.2 3.8 m ? dynamic total gate charge q g v ds =48v, i d =80a v gs =10v (note4,5) - 88 - nc gate-source charge q gs - 21 - gate-drain charge q gd - 20 - turn-on delay time t d(on) v dd =30v i d =80a r g =25 ? (note4,5) - 65 - ns turn-on rise time t r - 42 - turn-off delay time t d(off) - 240 - turn-off fall time t f - 63 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 5500 - pf output capacitance c oss - 1170 - reverse transfer capacitance c rss - 88 - source-drain diode ratings continuous source current i s v gs 2017. 02. 21 3/9 KUS035N06F revision no : 0 drain current i d (a) drain - source voltage v ds (v) fig1. i d - v ds - ? drain - source voltage v ds (v) fig2. i d - v ds - fig3. i d - v gs fig4. r ds(on) - i d 0 0 25 50 100 75 24 6 8 drain current i d (a) drain current i d (a) fig6. r ds(on) - t j normalized on resistance 15 5 0 10 0 150 50 100 200 gate - source voltage v gs (v) drain current i d (a) 100 75 1.2 00.30.6 50 0.9 0 25 -75 25 75 125 -25 175 3 2 1 0 fig5. r ds(on) - v gs 0468 210 gate - source voltage v gs (v) 15 10 0 5 junction temperature t j ( ) c v gs =10v i d =446a v gs =5v v gs =7v v gs =4.5v v gs =10v v gs =5v v gs =7v v gs =4.5v v gs =10v t j =100 c v ds =2v t j =25 c on - resistance r ds(on) (m w ) on - resistance r ds(on) (m w ) v gs =5v v gs =4.5v v gs =10v v gs =7v 10 3 10 2 10 -2 10 -1 10 0 10 1 10 1 10 0 i d =46a
2017. 02. 21 4/9 KUS035N06F revision no : 0 0.4 1.2 0.8 1.6 75 25 125 175 -25 -75 fig8. v th - t j normalized gate - threshold voltage v th fig7. bv dss - t j normalized breakdown voltage bv dss 1.2 0.9 0.8 1.1 1.0 -75 -25 25 75 175 125 junction temperature t j ( ) junction temperature t j ( ) source - drain voltage v sd (v) fig10. i s - v sd - reverse drain current i s (a) fig 9. i s - v sd - ? source - drain voltage v sd (v) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 reverse drain current i s (a) 100 75 50 0 25 v gs =0v i ds =250ua gate - charge q g (nc) 0 10 20 30 40 50 60 0 4 2 6 8 10 12 60 20 100 80 40 0 fig12. q g - v gs drain - source voltage v ds (v) gate - source voltage v gs (v) t j =100 c t j =25 c fig11. c - v ds capacitance (pf) drain - source voltage v ds (v) 10 3 10 4 10 2 30 40 50 60 10 0 10 10 1 20 0 c rss c oss c iss frequency=1mhz, v gs =0v v ds v ds max 20% 50% 80% 0.0 0.4 0.6 0.8 0.2 1.0 1.2 1.4 10 2 10 1 10 -1 10 0 v gs =7v v gs =4v v gs =3v v g s =2v v gs = 0v v gs =10v i d =80a
2017. 02. 21 5/9 KUS035N06F revision no : 0 0 40 20 50 75 50 100 125 150 25 0 fig14. p tot - t c power dissipation p tot (w) fig13. i d - t j drain current i d (a) 100 25 0 75 50 0 25 50 75 125 150 100 case temperature t c ( ) junction temperature t j ( ) fig16. s/w loss - i d switching loss (mj) drain current i d (a) 0.8 0.6 60 100 80 0.2 0 20 0.4 40 0 drain current i d (a) 0 100 200 300 60 20 80 100 40 0 fig15. s/w time - i d switching time (ns) v ds =30v, v gs =10v, r g =25 inductive load w td(on) eon eoff td(off) tr tf fig18. s/w loss - r g switching loss (mj) 0.8 1 0.6 150 200 0.2 0 50 0.4 100 0 0 500 1000 1500 100 200 150 50 0 fig17. s/w time - r g switching time (ns) v ds =30v, v gs =10v, i d =80a resistive load td(on) eon eoff td(off) tr gate resistance r g ( ) w gate resistance r g ( ) w v ds =30v, v gs =10v, r g =25 inductive load w v ds =30v, v gs =10v, i d =80a resistive load
2017. 02. 21 6/9 KUS035N06F revision no : 0 time (sec) 10 -2 10 -1 10 0 fig20. transient thermal response curve (junction - case) transient thermal resistance ( ? /w) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 - duty factor, d= t 1 /t 2 t 1 t 2 p dm - r th(j-c) = 2.27 c/w max duty=0.5 0. 05 0.1 0.02 0.2 single pulse 0.01 time (sec) 10 -1 10 0 10 1 10 2 fig21. transient thermal response curve (junction - ambient) transient thermal resistance ( ? /w) 10 -3 10 -1 10 0 10 1 10 2 10 3 10 -2 - duty factor, d= t 1 /t 2 t 1 t 2 p dm - r th(j-a) = 62.5 c/w max duty=0.5 0.1 0.02 0.2 single p ulse 0 .01 0.05 fig 19. safe operation area drain - source voltage v ds (v) 0.1 1 10 100 drain current i d (a) 100 1000 10 1 0.1 t c = 25 single nonrepetitive pulse c 10us 100us 1ms 10 m s dc
2017. 02. 21 7/9 KUS035N06F revision no : 0 to-220is (1) a a b b c c d d e e f f g g h h 1.47 max 1.47 max j j k k l m l n nn o o q r q r 123 m dim millimeters 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ package outline
2017. 02. 21 8/9 KUS035N06F revision no : 0 fig22. gate charge i d v gs v gs v ds v gs i constant 10v 10 v 25 w r l q g q gd q gs q t p fig24. resistive load switching fig23. single pulsed avalanche energy v ds (t) i d (t) v ds v ds v ds v gs v gs 10 v 25w l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 48v 0.8 v dss 0.5 v dss
2017. 02. 21 9/9 KUS035N06F revision no : 0 fig25. source - drain diode reverse recovery and dv /dt i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forward current body diode reverse current di/dt v dd i rm 0.5 v dss l
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